FDC6327C Fairchild Semiconductor, FDC6327C Datasheet - Page 5

• Manufacturer Part Number: FDC6327C
• Description: MOSFET N/P-CH DUAL 20V SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6327C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 1.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 325pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 7.7 S, 4.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.7 A @ N Channel or 1.9 A @ P Channel
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6327C; FDC6327CTR

Typical Characteristics: N-Channel
0.01
0.1
5
4
3
2
1
0
10
1
Figure 9. Maximum Safe Operating Area.
0
Figure 7. Gate-Charge Characteristics.
0.1
R
I
DS(ON)
D
SINGLE PULSE
R
= 2.7A
0.5
V
JA
T
GS
A
= 180
LIMIT
= 25
= 4.5V
V
o
o
DS
1
C
C/W
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
1.5
, GATE CHARGE (nC)
DC
1s
100ms
2
10ms
V
2.5
DS
1ms
10
= 5V
100 s
3
15V
3.5
10V
100
4
(continued)
5
4
3
2
1
0
500
400
300
200
100
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
0.1
4
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
1
8
10
12
C
C
C
ISS
OSS
RSS
SINGLE PULSE
R
100
JA
T
16
A
= 180
= 25
f = 1MHz
V
FDC6327C, Rev. E
GS
o
o
C
C/W
= 0 V
1000
20