FDY1002PZ Fairchild Semiconductor, FDY1002PZ Datasheet - Page 2

• Manufacturer Part Number: FDY1002PZ
• Description: MOSFET P-CH DUAL 20V SC89-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY1002PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 830mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 135pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY1002PZTR

FDY1002PZ Rev.B1
Notes:
1. R
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics and Maximum Rating
BV
∆BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
S
rr
DS(on)
user's board design.
FS
GS(th)
SD
∆T
∆T
iss
oss
rss
g
gs
gd
rr
θJA
Symbol
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(Note 2)
Parameter
(Note 2)
2
T
a) 200
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a 1 in
= 25 °C unless otherwise noted
o
C/W when mounted on
2
pad of 2 oz copper.
I
I
V
V
V
I
V
V
V
V
V
T
V
V
V
V
V
V
I
V
f = 1 MHz
D
D
D
F
J
DS
GS
GS
GS
GS
GS
GS
GS
DD
GS
DS
DD
GS
DD
GS
= –0.83 A, dI
= –250 µA, V
= –250 µA, referenced to 25 °C
= –250 µA, referenced to 25 °C
=125 °C
= 0 V, I
= –16 V, V
= ±8 V, V
= V
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –1.5 V, I
= –4.5 V, I
= –5 V, I
= –4.5 V
= –10 V, V
= –10 V, I
= –4.5 V, R
= –10 V, I
2
DS
Test Conditions
, I
S
D
D
= –0.52 A
DS
D
D
D
D
D
D
= –0.83 A
D
= –250 µA
GS
F
GS
GS
= –0.83 A
GEN
/dt = 100 A/µs
= –0.83 A
= –0.70 A
= –0.43 A
= –0.36 A
= –0.83 A,
= –0.83 A
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
(Note 2)
θJC
is guaranteed by design while R
b) 280
–0.4
minimum pad of 2 oz copper.
Min
–20
o
C/W when mounted on a
–1.0
–0.7
0.28
0.36
0.47
0.62
0.39
100
3.5
2.9
2.2
0.3
0.6
3.8
Typ
23
18
23
13
18
-11
3
2
θJA
–0.52
–1.0
0.85
–1.2
is determined by the
135
Max
0.5
0.7
1.2
1.8
±10
3.1
35
30
31
10
www.fairchildsemi.com
10
10
37
23
–1
mV/°C
mV/°C
Units
pF
pF
pF
nC
nC
nC
nC
µA
µA
ns
Ω
ns
ns
ns
ns
V
S
A
V
V