KSK30OBU Fairchild Semiconductor, KSK30OBU Datasheet

MOSFET N-CH 50V 10MA TO-92

KSK30OBU

Manufacturer Part Number
KSK30OBU
Description
MOSFET N-CH 50V 10MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSK30OBU

Current - Drain (idss) @ Vds (vgs=0)
600µA @ 10V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
50V
Voltage - Cutoff (vgs Off) @ Id
400mV @ 100nA
Input Capacitance (ciss) @ Vds
8.2pF @ 0V
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
100mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Low Noise PRE-AMP. Use
• High Input Impedance: I
• Low Noise: NF=0.5dB (TYP)
• High Voltage: V
Silicon N-channel Junction Fet
Absolute Maximum Ratings
Electrical Characteristics
I
DSS
V
I
P
T
T
BV
I
I
V
C
C
NF
G
GSS
DSS
Symbol
J
STG
Y
GDS
D
GS
iss
rss
FS
GDS
Symbol
(off)
Classification
Classification
I
DSS
Gate-Drain Breakdown Voltage
Gate Leak Current
Drain Leak Current
Gate-Source Voltage
Forward Transfer Admittance
Input Capacitance
Feedback Capacitance
Noise Figure
(mA)
GDS
Gate-Drain Voltage
Gate-Current
Collector Dissipation
Junction Temperature
Storage Temperature
= -50V
GSS
Parameter
=1nA (MAX)
0.30 ~ 0.75
T
R
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
KSK30
V
V
V
V
V
V
V
f=1MHz
V
R
f=120Hz
DS
GS
DS
DS
DS
DS
GD
DS
G
=100K
=0, I
= -30V, V
=10V, V
=10V, I
=10V, V
=0, V
=15V, V
=10V, V
0.60 ~ 1.40
Test Condition
G
O
GS
= -100 A
D
GS
GS
=0, f=1MHz
GS
DS
=0.1 A
DS
=0, f=1KHz
=0
=0
=0
=0
1.20 ~ 3.00
1. Source 2. Gate 3. Drain
1
Min.
-0.4
-50
0.3
1.2
Y
-55 ~ 125
Ratings
100
125
-50
10
Typ.
8.2
2.6
0.5
TO-92
2.60 ~ 6.50
Max.
6.5
-1
-5
5
Rev. B1, November 2002
G
Units
mW
mA
V
C
C
Units
mA
mS
nA
pF
pF
dB
V
V

Related parts for KSK30OBU

KSK30OBU Summary of contents

Page 1

... DSS V (off) Gate-Source Voltage GS Y Forward Transfer Admittance FS C Input Capacitance iss C Feedback Capacitance rss NF Noise Figure I Classification DSS Classification I (mA) DSS ©2002 Fairchild Semiconductor Corporation KSK30 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition V = -100 -30V =10V ...

Page 2

... V = -1. -1.6V GS 0.0 0.0 0.8 1.6 V [V], DRAIN-SOURCE VOLTAGE DS Figure 6.4 4.8 3.2 1.6 0.0 0.0 1.6 3.2 I [mA], DRAIN CURRENT D Figure 5. Yfs -I ©2002 Fairchild Semiconductor Corporation 6 5 -0.2V 4 -0. -0. -0. -1.0V GS 0.8 R 0.0 -3.2 ...

Page 3

... GS f=1kHz 25℃ 0.1 0 [mA], DRAIN CURRENT DSS Figure 7. Yfs -I 160 140 120 100 100 C], CASE TEMPERATURE C Figure 9. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 1000 100 100 DSS 125 150 175 200 iss rss 1MHz - [V], GATE-DRAIN VOLTAGE GD V [V], GATE-SOURCE VOLTAGE GS Figure 8 ...

Page 4

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B1, November 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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