P1086 Fairchild Semiconductor, P1086 Datasheet
P1086
Manufacturer Part Number
P1086
Description
IC SWITCH P-CHAN 30V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.P1086.pdf
(3 pages)
Specifications of P1086
Current - Drain (idss) @ Vds (vgs=0)
10mA @ 20V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
10V @ 1µA
Input Capacitance (ciss) @ Vds
45pF @ 15V
Resistance - Rds(on)
75 Ohm
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
P-Channel
Power Dissipation
350 mW
Gate-source Breakdown Voltage
30 V
Gate-source Cutoff Voltage
10 V
Drain Current (idss At Vgs=0)
0.03 mA to 0.09 mA
Resistance Drain-source Rds (on)
75 Ohms
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 30 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
P1086
Manufacturer:
FAIRCHILD
Quantity:
10 000
©2002 Fairchild Semiconductor Corporation
P-Channel Switch
• This device is designed for low level analog switching sample and hold
• Sourced from process 88.
Absolute Maximum Ratings
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
V
V
I
T
BV
I
I
I
I
V
V
r
r
C
C
t
t
t
t
P
R
R
GF
GSS
D
DGO
DSS
d
r
d
f
Symbol
DS
ds
circuits and chopper stabilized amplifiers.
J
DG
GS
GS
DS
D
iss
rss
(on)
(off)
(off)
Symbol
, T
(on)
JC
JA
GSS
(on)
Symbol
(on)
(off)
STG
Gate-Source Breakdown Voltage
Gate Reverse Current
Drain Cutoff Leakage Current
Drain-Gate Leakage Current
Zero-Gate Voltage Drain Current
Gate-Source Cutoff Voltage
Drain-Source On Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Trun On Time
Rise Time
Trun Off Time
Fall Time
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
T
A
T
Parameter
=25 C unless otherwise noted
C
=25 C unless otherwise noted
T
C
=25 C unless otherwise noted
Parameter
P1086
V
V
V
V
V
I
V
V
V
V
V
V
V
V
V
R
I
S
D
DS
GS
DS
GS
DG
DS
DS
GS
GS
GS
DS
DS
DD
GS
L
(on) = 6mA
= 0
= 910
(off) = +12V
= 0V, IG = 1 A
= 15V
= 20V, V
= 15V, I
= 15V, V
= 0V, V
= 15V
= 12V
= 0V, I
= 0V, I
= 0V, I
= -6V
= 15V
Test Condition
D
D
D
GS
D
GS
= 6mA
= 1mA
= 0, f = 1kHz
GS
= 1 A
= 12V, f = 1MHz
= 0V
= 0V, f = 1MHz
T = +85 C
T = +85 C
-55 ~ +150
Value
- 30
30
50
D
S G
Min.
30
10
Max.
350
125
357
2.8
Typ.
TO-92
Max.
0.5
0.1
0.5
Rev. A2, November 2002
10
10
75
75
45
10
15
20
15
50
2
2
Units
mW/ C
mA
V
V
Units
C
mW
C/W
C/W
Units
mA
nA
nA
N
pF
pF
ns
ns
ns
ns
V
V
V
A
A
A
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P1086 Summary of contents
Page 1
... Trun Off Time d t Fall Time f Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation P1086 T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Condition 15V 15V DS ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, November 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...