BSR58 Fairchild Semiconductor, BSR58 Datasheet
BSR58
Manufacturer Part Number
BSR58
Description
IC AMP N-CHAN 40V 8MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSR58.pdf
(3 pages)
Specifications of BSR58
Current - Drain (idss) @ Vds (vgs=0)
8mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
800mV @ 0.5nA
Resistance - Rds(on)
60 Ohm
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
250mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
250 mW
Gate-source Breakdown Voltage
- 40 V
Drain Current (idss At Vgs=0)
0.08 mA to 0.24 mA
Resistance Drain-source Rds (on)
60 Ohms
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
40 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Breakdown Voltage Vbr
40V
Gate-source Cutoff Voltage Vgs(off) Max
4V
Power Dissipation Pd
250mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Current Rating
50mA
Rohs Compliant
Yes
Transistor Type
JFET
Zero Gate Voltage Drain Current Idss
8mA To 80mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSR58
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
BSR58,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
N-Channel Low-Frequency Low-Noise
Amplifier
• This device is designed for low-power chopper or switching application
Absolute Maximum Ratings
Electrical Characteristics
V
V
I
P
T
T
BV
I
I
V
V
r
C
t
t
t
GF
GSS
DSS
d
r
off
ds
sourced from process 51
STG
J
DGO
GSO
tot
GS
DS
rss
Symbol
(on)
GSS
Symbol
(on)
(off)
Gate-Source Voltage
Gate Reverse Current
Zero-Gate Voltage Drain Current
Gate-Source Cut-off Voltage
Drain-Source On Voltage
Drain-Source On Reverse
Reverse Transfer Capacitance
Delay Time
Rise Time
Turn-off Time
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Total Power Dissipation up to T
Storage Temperature Range
Junction Temperature
Parameter
T
C
=25 C unless otherwise noted
T
Parameter
C
=25 C unless otherwise noted
amb
BSR58
=40 C
V
V
V
V
V
V
V
V
I
D
DS
GS
DS
DS
GS
GS
DS
DD
= 10mA, V
= 0V, I
= 20V
= 15V, V
= 15V, I
= 0V, I
= 0V, I
= 0V, V
= 10V, V
Test Condition
C
D
D
GS
D
= 1 A
= 5mA
= 0
GS
GS
GS
= 0.5nA
= 10V
(on) = 0V
(off) = 10V
= 0V
1. Drain 2. Source 3. Gate
Min.
- 55 ~ 150
0.8
40
8
3
Value
- 40
250
150
40
50
Typ.
1
SOT-23
Mark: M6
Max.
100
0.4
Rev. A1, November 2002
80
60
10
10
1
4
5
2
Units
mW
mA
V
V
C
C
Units
mA
nA
nS
nS
nS
pF
V
V
V
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BSR58 Summary of contents
Page 1
... Drain-Source On Voltage DS r (on) Drain-Source On Reverse ds C Reverse Transfer Capacitance rss t Delay Time d t Rise Time r t Turn-off Time off ©2002 Fairchild Semiconductor Corporation BSR58 T =25 C unless otherwise noted C Parameter =40 C amb T =25 C unless otherwise noted C Test Condition 20V 15V, V ...
Page 2
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A1, November 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...