2N5458 Fairchild Semiconductor, 2N5458 Datasheet

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2N5458

Manufacturer Part Number
2N5458
Description
IC AMP GP N-CHAN 25V 10MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N5458

Current - Drain (idss) @ Vds (vgs=0)
2mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
1V @ 10nA
Input Capacitance (ciss) @ Vds
7pF @ 15V
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
625mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
625 mW
Gate-source Breakdown Voltage
- 25 V
Drain Current (idss At Vgs=0)
2 mA to 6.5 mA
Forward Transconductance Gfs (max / Min)
0.0015 S to 0.0055 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
25 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5458
Manufacturer:
FAIRCHILD
Quantity:
21 000
Part Number:
2N5458
Manufacturer:
NSC
Quantity:
10 000
Part Number:
2N5458
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
1997 Fairchild Semiconductor Corporation
V
V
I
T
P
R
R
Symbol
Symbol
GF
J
DG
GS
D
, T
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
JC
JA
*
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
Derate above 25 C
S
D
2N5457
2N5458
2N5459
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
2N5457-5459
Mark: 6D / 61S / 6L
625
125
357
5.0
MMBF5457
MMBF5458
MMBF5459
SOT-23
G
Max
*MMBF5457-5459
-55 to +150
Value
D
- 25
25
10
350
556
2.8
NOTE: Source & Drain
are interchangeable
S
Units
mW/ C
mA
Units
V
V
C
mW
C/W
C/W

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2N5458 Summary of contents

Page 1

... N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol V Drain-Gate Voltage DG V Gate-Source Voltage GS I Forward Gate Current GF Operating and Storage Junction Temperature Range ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Gate-Source Breakdown Voltage (BR)GSS I Gate Reverse Current GSS V Gate-Source Cutoff Voltage GS(off) V Gate-Source Voltage GS ON CHARACTERISTICS I Zero-Gate Voltage Drain Current* DSS SMALL SIGNAL CHARACTERISTICS Forward Transfer Conductance* g ...

Page 3

Typical Characteristics Transfer Characteristics Common Drain-Source Output Conductance vs. Drain Current N-Channel General Purpose Amplifier (continued) Parameter Interaction (continued) Transfer Characteristics Transconductance vs. Drain Current ...

Page 4

Typical Characteristics Channel Resistance vs. Temperature Leakage Current vs. Voltage 700 600 500 400 300 200 100 0 0 N-Channel General Purpose Amplifier (continued) Capacitance vs. Voltage Power Dissipation vs Ambient Temperature TO-92 SOT- 100 125 o ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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