KSK596BU Fairchild Semiconductor, KSK596BU Datasheet

JFET N-CH 20V 10MA TO-92S

KSK596BU

Manufacturer Part Number
KSK596BU
Description
JFET N-CH 20V 10MA TO-92S
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSK596BU

Current - Drain (idss) @ Vds (vgs=0)
100µA @ 5V
Current Drain (id) - Max
1mA
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
20V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 1µA
Input Capacitance (ciss) @ Vds
3.5pF @ 5V
Mounting Type
Through Hole
Package / Case
TO-92-3 (Short Body)
Power - Max
100mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
Si N-channel Junction FET
Absolute Maximum Ratings
Electrical Characteristics
I
DSS
V
I
I
P
T
T
BV
V
I
lY
C
C
G
D
DSS
Symbol
J
STG
GDO
D
GS
iss
rss
FS
GDO
Symbol
(off)
l
Classification
Classification
I
DSS
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
( A)
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
100 ~ 170
T
a
=25 C unless otherwise noted
A
T
Parameter
a
=25 C unless otherwise noted
KSK596
V
V
V
V
V
I
G
DS
DS
DS
DS
DS
= -100uA
=5V, I
=5V, V
=5V, V
=5V, V
=5V, V
Test Condition
D
GS
GS
GS
GS
=1 A
=0, f=1MHz
=0
=0, f=1MHz
=0, f=1MHz
150 ~ 240
B
1.Source 2. Gate 3. Drain
Min.
100
-20
0.4
1
-55 ~ 150
Ratings
100
150
-20
10
1
Typ.
0.65
-0.6
1.2
3.5
210 ~ 350
TO-92S
Max.
-1.5
350
C
Rev. B2, November 2002
Units
mW
mA
mA
V
C
C
Units
ms
pF
pF
V
V
A

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KSK596BU Summary of contents

Page 1

... Gate-Source Cut-off Voltage GS I Drain Current DSS lY l Forward Transfer Admittance FS C Input Capacitance iss C Output Capacitance rss I Classification DSS Classification DSS ©2002 Fairchild Semiconductor Corporation KSK596 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100uA G V =5V =5V ...

Page 2

... V [V], GATE-SOURCE VOLTAGE GS Figure 0.1 0.1 I [mA], DRAIN CURRENT DSS Figure 5. V (off)-I GS ©2002 Fairchild Semiconductor Corporation 1000 I = 200 A DSS 900 800 700 600 500 400 300 200 100 = -0. -0. ...

Page 3

... Typical Characteristics [V], DRAIN-SOURCE VOLTAGE DS Figure 7. C RSS ©2002 Fairchild Semiconductor Corporation (Continued) 140 120 f = 1MHz 100 100 125 150 C], AMBIENT TEMPERATURE a Figure Rev. B2, November 2002 ...

Page 4

... Package Dimensions 4.00 0.66 MAX. 0.49 0.10 1.27TYP [1.27 0.20] 3.72 2.86 0.20 ©2002 Fairchild Semiconductor Corporation TO-92S 0.20 1.27TYP [1.27 0.20] 0.20 2.31 0.20 +0.10 0.35 –0.05 Dimensions in Millimeters Rev. B2, November 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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