2N5457 Fairchild Semiconductor, 2N5457 Datasheet - Page 4

JFET N-CH GP 10MA TO-92

2N5457

Manufacturer Part Number
2N5457
Description
JFET N-CH GP 10MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N5457

Current - Drain (idss) @ Vds (vgs=0)
1mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
500mV @ 10nA
Input Capacitance (ciss) @ Vds
7pF @ 15V
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
625mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
625 mW
Gate-source Breakdown Voltage
- 25 V
Drain Current (idss At Vgs=0)
2.5 mA to 5 mA
Forward Transconductance Gfs (max / Min)
0.001 S to 0.005 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
25 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
No. Of Pins
3
Breakdown Voltage Vbr
-25V
Current Rating
10mA
Gate-source Cutoff Voltage
6V
Gate-source Cutoff Voltage Vgs(off) Max
-6V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N5457FS
ECG457

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N-Channel General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Channel Resistance vs.
Noise Voltage vs.
Temperature
Frequency
Leakage Current vs. Voltage
Capacitance vs. Voltage
5
Power Dissipation vs
Ambient Temperature
700
600
TO-92
500
SOT-23
400
300
200
100
0
0
25
50
75
100
125
150
o
TEMPERATURE ( C)

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