FGH30N120FTDTU Fairchild Semiconductor, FGH30N120FTDTU Datasheet - Page 5

• Manufacturer Part Number: FGH30N120FTDTU
• Description: IGBT TRENCH 1200V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 339W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH30N120FTD
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
500
100
20
16
12
15
12
10
8
4
0
9
6
3
0
0
0
0
Rev. A
Common Emitter
T
C
= 25
Gate Resistance
t
r
t
o
d(on)
50
C
4
20
Gate-Emitter Voltage, V
I
C
30A
Gate Resistance, R
= 15A
Gate Charge, Q
V
CC
100
8
40
= 200V
60A
Common Emitter
V
I
T
T
150
C
12
CC
C
C
60
g
= 30A
= 25
= 125
[nC]
= 600V, V
Common Emitter
T
C
G
400V
GE
o
= 125
[ Ω ]
C
o
C
[V]
600V
200
16
GE
o
80
GE
C
= 15V
250
20
100
5
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
Figure 12. Turn-off Characteristics vs.
8000
6000
4000
2000
2000
1000
0.01
200
100
100
0.1
10
50
0
1
1
1
0
*Notes:
1. T
2. T
3. Single Pulse
Gate Resistance
Collector-Emitter Voltage, V
C
J
Collector-Emitter Voltage, V
= 150
= 25
20
Gate Resistance, R
o
C
o
10
C
C
C
C
res
oes
ies
40
100
Common Emitter
V
I
T
T
C
CC
C
C
DC
10 ms
= 30A
60
= 25
= 125
Common Emitter
V
T
= 600V, V
G
GE
C
10
1ms
[ Ω ]
= 25
o
= 0V, f = 1MHz
C
o
CE
100
C
CE
o
[V]
C
µ
80
[V]
s
GE
t
d(off)
1000 3000
10
www.fairchildsemi.com
t
f
= 15V
µ
s
100
30