FGPF45N45TTU Fairchild Semiconductor, FGPF45N45TTU Datasheet - Page 4

• Manufacturer Part Number: FGPF45N45TTU
• Description: IGBT PDP 450V 45A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of FGPF45N45TTU

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce(on) (max) @ Vge, Ic: 1.5V @ 15V, 20A
• Power - Max: 51.6W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -

FGPF45N45T Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
15
12
100
500
20
16
12
9
6
3
0
10
8
4
0
1
0
0
0
Common Emitter
T
C
Gate Resistance
= 25
I
C
o
= 20A
C
30A
4
10
Gate-Emitter Voltage, V
30
t
d(on)
Gate Resistance, R
t
Gate Charge, Q
r
V
CC
8
20
45A
= 100V
60
Common Emitter
V
I
T
T
C
12
CC
C
C
g
30
= 45A
= 25
= 125
[nC]
= 200V, V
Common Emitter
T
200V
G
C
GE
o
= 125
[ Ω ]
C
o
90
C
GE
[V]
16
40
o
GE
C
= 15V
120
20
50
4
Figure 8. Capacitance Characteristics
10000
Figure 10. SOA Characteristics
1000
1000
Figure 12. Turn-off Characteristics vs.
0.01
100
500
100
100
0.1
10
10
10
1
0.1
1
0
I
I
C
C
Common Emitter
V
T
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
GE
C
MAX (Pulse)
MAX (Continuous)
= 25
= 0V, f = 1MHz
Collector-Emitter Voltage, V
Gate Resistance
Collector-Emitter Voltage, V
o
t
C
f
10
t
d(off)
Gate Resistance, R
1
C
res
C
20
ies
C
oes
10
DC Operation
Common Emitter
V
I
T
T
C
30
CC
C
C
= 45A
= 25
= 125
G
= 200V, V
10
[
10 ms
Ω
CE
o
100
C
]
1ms
o
100
CE
C
[V]
40
[V]
µ
s
GE
10
= 15V
µ
www.fairchildsemi.com
s
1000
30
50