FGPF30N30TTU Fairchild Semiconductor, FGPF30N30TTU Datasheet

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... Thermal Resistance, Junction to Ambient θJA Notes : (1) Repetitive tese, Pulse width = 100usec, Duty = 0.1 *I _pluse limited by max Tj C ©2007 Fairchild Semiconductor Corporation FGPF30N30T Rev. A1 General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- = 20A C tions where low conduction and switching losses are essential ...

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... Package Marking and Ordering Information Device Marking Device FGPF30N30T FGPF30N30TTU Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES ∆BV / Temperature Coefficient of Breakdown CES ∆T Voltage J I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage ...

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Typical Performance Characteristics Figure 1. Typical Output Characteristics 20V 12V 60 10V 0.0 1.5 3.0 Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteritics 80 Common Emitter V = 15V ...

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Typical Performance Characteristics Figure 7. Saturation Voltage vs. Vge 30A 4 20A I = 10A Gate-Emitter Voltage, V Figure 9. Gate Charge Characteristics 15 Common Emitter ...

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Typical Performance Characteristics Figure 13. Turn-On Characteristics vs. Collector Current 200 Common Emitter Ω 15V 100 125 ...

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Mechanical Dimensions 10.16 MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] 9.40 FGPF30N30T Rev. A1 TO-220F ±0.20 ±0.10 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 6 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters ...

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... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...