FGPF120N30TU Fairchild Semiconductor, FGPF120N30TU Datasheet
FGPF120N30TU
Specifications of FGPF120N30TU
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FGPF120N30TU Summary of contents
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... R Thermal Resistance, Junction-to-Ambient θJA Notes (1) Repetitive test , pulse width=100usec , Duty=0.5 * Ic_pulse limited by max Tj ©2006 Fairchild Semiconductor Corporation FGPF120N30 Rev. A General Description Employing Unified IGBT Technology, Fairchild's PWD series of = 25A IGBTs provides low conduction and switching loss. The PWD C series offers the optimum solution for PDP applications where low condution loss is essential ...
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... Package Marking and Ordering Information Device Marking Device FGPF120N30 FGPF120N30TU Electrical Characteristics Symbol Parameter Off Characteristics BV Collector-Emitter Breakdown Voltage CES ∆B / Temperature Coefficient of Breakdown VCES ∆T Voltage J I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) ...
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Typical Performance Characteristics Figure 1. Typical Output Characteristics 120 20V 15V 100 12V 10V Collector-Emitter Voltage, V Figure 3 Typical Saturation Voltage Characteristics ...
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Figure 7. Saturation Voltage vs. Vge itter ...
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Figure 13 Turn-On Characteristics vs. Collector Current 1000 Com itter V = 15V Ω 125 C C 100 tr td(on ...
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Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FGPF120N30 Rev. A TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 6 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...