FGPF30N30 Fairchild Semiconductor, FGPF30N30 Datasheet - Page 5

• Manufacturer Part Number: FGPF30N30
• Description: IGBT PDP 300V 80A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of FGPF30N30

• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.5V @ 15V, 10A
• Power - Max: 46W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -
• Igbt Type: -

FGPF30N30 Rev. A
Typical Performance Characteristics
Figure 13. Turn-On Characteristics vs.
Figure 15. Switching Loss vs Gate Resistance
Figure 17. Transient Thermal Impedance of IGBT
100
500
100
10
10
5
0
Common Emitter
V
T
T
Collector Current
1 E - 3
GE
C
C
0 . 0 1
= 25
= 125
0 . 1
1 0
= 15V, R
10
1
1 E - 5
o
10
C
o
C
0 . 0 2
0 . 0 1
0 . 0 5
Collector Current, I
0 . 2
0 . 1
0 . 5
Gate Resistance, R
20
G
= 20
15
Ω
30
s in g le p u ls e
1 E - 4
40
20
Common Emitter
V
I
T
T
C
C
C
CC
= 20A
= 25
= 125
C
G
= 200V, V
[
[A]
50
Ω
o
C
o
]
C
25
GE
60
t
d(on)
E
= 15V
E
t
R e c t a n g u la r P u ls e D u r a t i o n [ s e c ]
1 E - 3
r
off
on
70
30
(Continued)
Figure 14. Turn-Off Characteristics vs.
5
Figure 16. Switching Loss vs Collector Current
0 . 0 1
1000
100
500
100
10
1
5
0
Common Emitter
V
T
T
C
C
Collector Current
GE
= 25
= 125
= 15V, R
5
o
10
C
o
0 . 1
C
Collector Current, I
Collector Current, I
G
= 20
10
15
Ω
15
Pdm
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
20
1
Common Emitter
V
T
T
C
C
GE
t1
C
= 25
= 125
C
20
t2
= 15V, R
[A]
t
[A]
d(off)
o
C
o
C
25
25
G
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C
t
f
= 20
E
E
off
on
1 0
Ω
30
30