FGPF7N60RUFDTU Fairchild Semiconductor, FGPF7N60RUFDTU Datasheet

IGBT RUF 600V 14A CO-PAK TO-220F

FGPF7N60RUFDTU

Manufacturer Part Number
FGPF7N60RUFDTU
Description
IGBT RUF 600V 14A CO-PAK TO-220F
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGPF7N60RUFDTU

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 7A
Current - Collector (ic) (max)
14A
Power - Max
41W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
14A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
©2006 Fairchild Semiconductor Corporation
FGPF7N60RUFD Rev. A
FGPF7N60RUFD
600V, 7A RUF IGBT CO-PAK
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
• CO-PAK, IGBT with FRD : t
• Short Circuit rated, 10us @ T
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
FM
stg
J
L
CES
GES
D
Symbol
θJC
θJC
θJA
Symbol
(IGBT)
(DIODE)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
CE(sat)
rr
C
= 50 ns (typ.)
1.Gate 2.Collector 3.Emitter
=100°C, V
1
= 1.95 V @ I
Description
Parameter
GE
=15V, V
C
TO-220F
= 7A
CE
=300V
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 25°C
= 100°C
= 100°C
= 25°C
= 100°C
1
Applications
Motor controls and general purpose inverters.
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides
low conduction and switching losses.The device is designed for
Motor applications where ruggedness is a required feature.
FGP7N60RUFD
Typ.
G
G
--
--
--
-55 to +150
-55 to +150
± 20
600
300
14
21
12
60
41
16
7
C
C
E
E
Max.
62.5
3.0
4.2
October 2006
www.fairchildsemi.com
Units
°C
°C
°C
Units
W
W
V
V
A
A
A
A
A
°C/W
°C/W
°C/W

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FGPF7N60RUFDTU Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R (DIODE) Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FGPF7N60RUFD Rev. A Applications Motor controls and general purpose inverters Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGPF7N60RUFD FGPF7N60RUFDTU Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector-Emitter Breakdown Voltage CES ∆B / Temperature Coefficient of Breakdown VCES ∆T Voltage J I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage ...

Page 3

Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGPF7N60RUFD Rev 25°C unless otherwise noted C ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 20V ollector-Em itter Voltage, V Figure 3. Saturation Voltage vs Case Temperature at Variant Current Level 4 ...

Page 5

Typical Performance Characteristics Figure 7. Capacitance Characteristics Temperature at Variant Current Level 1000 800 Ciss 600 Coss 400 Crss 200 0 1 Collector-Emitter Voltage, V Figure 9. Turn-Off Characteristics vs. Gate Resistance Com itter V = 300V, ...

Page 6

Typical Performance Characteristics Figure 13. Switching Loss vs. Collector Current 1000 Common Emitter Ω +/-15V 125 C 100 Collector ...

Page 7

Typical Performance Characteristics Figure 17. Forward Voltage Characteristics 100 0.1 0.5 1.0 1.5 Forward Voltage , V Figure 19. Stored Charge di/dt=200A/us 50 di/dt=100A/us ...

Page 8

Mechanical Dimensions Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FGPF7N60RUFD Rev. A TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 8 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...

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