IHP10T120 Infineon Technologies, IHP10T120 Datasheet - Page 8

• Manufacturer Part Number: IHP10T120
• Description: IGBT 1200V 16A 138W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHP10T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 10A
• Current - Collector (ic) (max): 16A
• Power - Max: 138W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
6,0mJ
4,0mJ
2,0mJ
0,0mJ
2,5mJ
2,0mJ
1,5mJ
1,0mJ
0,5mJ
0,0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
R
Dynamic test circuit in Figure E)
GE
G
=81Ω,
5A
=0/15V, R
*) E
*) E
due to diode recovery
T
due to diode recovery
50°C
on
on
J
I
,
C
and E
and E
,
JUNCTION TEMPERATURE
G
COLLECTOR CURRENT
=81Ω,
ts
10A
J
CE
ts
=150°C, V
include losses
include losses
=600V, V
100°C
CE
GE
=600V,
=0/15V, I
15A
Soft Switching Series
150°C
C
=8A,
E
E
E
ts
on
E
off
E
*
8
E
*
on
ts
off
*
*
3,2 mJ
2,8 mJ
2,4 mJ
2,0 mJ
1,6 mJ
1,2 mJ
0,8 mJ
0,4 mJ
0,0 mJ
3mJ
2mJ
1mJ
0mJ
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter voltage
(inductive load, T
R
Dynamic test circuit in Figure E)
GE
G
400V
=81Ω,
=0/15V, I
E
E
E
5Ω
V
ts
off
on
*) E
*
*
CE
*) E
due to diode recovery
,
on
due to diode recovery
COLLECTOR
500V
and E
on
C
50Ω
R
=8A,
and E
G
,
ts
J
J
GATE RESISTOR
=150°C, V
=150°C, V
include losses
ts
600V
include losses
100Ω
-
EMITTER VOLTAGE
IHP10T120
700V
CE
GE
150Ω
Rev. 2.4 Sept. 07
=600V,
=0/15V, I
800V
200Ω
C
=8A,
E
E
E
on
ts
off
*
*