IHP10T120 Infineon Technologies, IHP10T120 Datasheet - Page 3

• Manufacturer Part Number: IHP10T120
• Description: IGBT 1200V 16A 138W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHP10T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 10A
• Current - Collector (ic) (max): 16A
• Power - Max: 138W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
1)
2)
Power Semiconductors
Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance L
σ
and Stray capacity C
1)
C
C
C
Q
L
I
t
t
t
t
E
E
E
t
Q
I
Symbol
C ( S C )
d ( o n )
r
d ( o f f )
f
r r
r r m
E
o n
o f f
t s
i s s
o s s
r s s
G a t e
r r
Soft Switching Series
σ
j
=25 °C
3
due to dynamic test circuit in Figure E.
V
V
f= 1 M Hz
V
V
V
V
T
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
di
j
j
σ
j
C E
G E
C C
G E
G E
C C
C C
G E
R
G
σ
= 25° C,
= 25° C,
F
2 )
= 25° C
2 )
= 8 00V, I
= 8 1Ω ,
/ dt = 75 0A / µs
= 25V,
= 0V,
= 9 60V, I
= 1 5V
= 1 5V,t
= 6 10V, I
= 0/ 15V,
= 180nH,
=39pF
= 600V,
Conditions
S C
F
C
= 4A,
C
≤10µs
= 10A,
= 10A
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IHP10T120
Value
0.68
0.78
1.46
7.15
typ.
606
520
115
330
48
29
53
13
48
45
20
82
Rev. 2.4 Sept. 07
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
nC
nH
A
Unit
ns
mJ
ns
nC
A