IHP10T120 Infineon Technologies, IHP10T120 Datasheet - Page 7

• Manufacturer Part Number: IHP10T120
• Description: IGBT 1200V 16A 138W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHP10T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 10A
• Current - Collector (ic) (max): 16A
• Power - Max: 138W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
100ns
100ns
10ns
10ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
R
Dynamic test circuit in Figure E)
1ns
GE
G
=81Ω,
=0/15V, R
0°C
t
t
t
t
t
t
t
t
d(off)
r
f
d(on)
r
f
d(on)
d(off)
T
5A
J
I
,
C
,
JUNCTION TEMPERATURE
G
COLLECTOR CURRENT
=81Ω,
50°C
J
CE
=150°C, V
=600V, V
10A
100°C
CE
GE
=600V,
=0/15V, I
15A
Soft Switching Series
C
150°C
=8A,
7
100 ns
7V
6V
5V
4V
3V
2V
1V
0V
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
10 ns
-50°C
C
GE
1 ns
= 0.3mA)
=0/15V, I
5Ω
t
t
t
t
d(off)
f
d(on)
r
T
J
,
0°C
50Ω
C
JUNCTION TEMPERATURE
R
=8A,
G
,
J
GATE RESISTOR
=150°C, V
100Ω
50°C
IHP10T120
CE
150Ω
100°C
Rev. 2.4 Sept. 07
=600V,
200Ω
150°C
max.
typ.
min.