IHP10T120 Infineon Technologies, IHP10T120 Datasheet - Page 10

• Manufacturer Part Number: IHP10T120
• Description: IGBT 1200V 16A 138W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHP10T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 10A
• Current - Collector (ic) (max): 16A
• Power - Max: 138W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
10
500ns
450ns
400ns
350ns
300ns
250ns
200ns
150ns
100ns
Figure 23. IGBT transient thermal
resistance as a function of pulse width
(D = t
Figure 23. Typical reverse recovery time as
a function of diode current slope
(V
Dynamic test circuit in Figure E)
50ns
-1
-2
0
K/W
K/W
K/W
R
0A/µs
=600V, I
10µs
p
I
D=0.5
F
/ T)
=8A
di
0.1
0.2
2A
4A
F
/dt,
single pulse
F
100µs
=8A,
0.01
0.02
t
400A/µs
DIODE CURRENT SLOPE
P
0.05
,
PULSE WIDTH
1ms
R
0.1759
0.3291
0.2886
0.1189
R , ( K / W )
1
C
1
=
800A/µs
τ
10ms
1
/ R
1
C
8.688*10
1.708*10
1.259*10
1.898*10
2
=
100ms
Soft Switching Series
τ
τ
, ( s )
2
/ R
R
2
1200A/µ
2
-2
-2
-3
-4
10
850nC
800nC
750nC
700nC
650nC
600nC
550nC
500nC
450nC
400nC
10
10
10
Figure 24. Diode transient thermal
impedance as a function of pulse width
(D=t
Figure 24. Typical reverse recovery charge
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
-1
-2
0
R
K/W
K/W
K/W
0A/µs
=800V, T
P
/T)
10µs
I
F
=8A
D=0.5
0.1
single pulse
di
4A
2A
0.2
F
0.01
/dt,
J
0.02
100µs
= 125°C,
t
DIODE CURRENT SLOPE
0.05
400A/µs
P
,
PULSE WIDTH
1ms
IHP10T120
R
0.500
0.578
1.036
0.4046
R , ( K / W )
1
C
1
=
800A/µs
τ
10ms
Rev. 2.4 Sept. 07
1
/ R
1
C
4.529*10
6.595*10
1.003*10
9.423*10
2
100ms
=
τ
τ
, ( s )
2
/ R
1200A/
R
2
2
-2
-3
-3
-5
1