IHP10T120 Infineon Technologies, IHP10T120 Datasheet
IHP10T120
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IHP10T120 Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors Soft Switching Series ® CE(sat) ™ HE diode T Marking j,max H10T120 PG-TO-220-3-1 150°C Symbol jmax 25° limited jmax IHP10T120 PG-TO-220-3-1 Package Value Unit 1200 16 ± µs 138 W -40...+150 °C -55...+150 260 Rev. 2.4 Sept. 07 ...
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... 5° 0° 0V 25° 0° 6mA 1200V , 25° 0° 20V 10A IHP10T120 Max. Value Unit 0.9 K/W 2.6 62 Value Unit min. typ. max. 1200 - - V - 1.7 2 1.65 2.15 - 1.7 - 5.0 5 100 none Ω Rev. 2.4 Sept. 07 ...
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... Symbol Conditions 25° 10V 10A 15V 1Ω 180nH, σ =39pF E σ Energy losses include E “tail” and diode reverse recovery 25° 00V 4A µ due to dynamic test circuit in Figure E. σ 3 IHP10T120 - 606 - Value Unit min. typ. max 520 - - 115 - ns - 330 nC - 7.15 A ...
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... I = 10A 15V 81Ω 180nH, σ =39pF E σ Energy losses include E “tail” and diode reverse recovery 0° 00V 4A µ due to dynamic test circuit in Figure E. σ 4 IHP10T120 Value Unit min. typ. max 592 - - 177 - - 185 - ns - 630 - Rev. 2.4 Sept. 07 ...
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... T , CASE TEMPERATURE C Figure 4. Collector current as a function of case temperature ≥ 15V, T ≤ 150° IHP10T120 t =2µs p 10µs 50µs 200µs 500µs 2ms DC 100V 1000V - EMITTER VOLTAGE 75°C 125°C Rev. 2.4 Sept. 07 ...
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... Figure 6. Typical output characteristic (T = 150°C) j 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V 10V 12V -50°C 0° JUNCTION TEMPERATURE J Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IHP10T120 EMITTER VOLTAGE I =15A =2.5A C 50°C 100°C Rev. 2.4 Sept. 07 ...
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... Dynamic test circuit in Figure 150°C -50°C 0° JUNCTION TEMPERATURE J Figure 12. Gate-emitter threshold voltage as a function of junction temperature =8A 0.3mA IHP10T120 100Ω 150Ω 200Ω GATE RESISTOR =150°C, V =600V max. typ. min. 50°C 100°C 150°C Rev. 2.4 Sept. 07 ...
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... V , COLLECTOR CE Figure 16. Typical switching energy losses as a function of collector emitter voltage =8A, (inductive load, T =150° =81Ω, G Dynamic test circuit in Figure E) 8 IHP10T120 include losses off 100Ω 150Ω 200Ω =600V, CE 600V 700V 800V - EMITTER VOLTAGE ...
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... MHz) GE 75A 50A 25A 0A 16V 12V V , GATE GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage ≤ 600V IHP10T120 C iss C oss C rss 10V 20V - EMITTER VOLTAGE 14V 16V 18V - EMITTETR VOLTAGE ≤ 150°C) j Rev. 2.4 Sept. 07 ...
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... F Figure 24. Typical reverse recovery charge as a function of diode current slope (V =800V 125° Dynamic test circuit in Figure E) 10 IHP10T120 τ 0.500 4.529*10 0.05 -3 0.578 6.595*10 -3 1.036 1.003*10 -5 0.4046 9.423* τ τ ...
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... T = 125° Dynamic test circuit in Figure E) 2,4V I =8A F 2,0V 4A 1,6V 2A 1,2V 0,8V 0,4V 0,0V -50°C 0° JUNCTION TEMPERATURE J Figure 28. Typical diode forward voltage as a function of junction temperature 11 IHP10T120 800A/µs 1200A 50°C 100°C 150°C Rev. 2.4 Sept. 07 ...
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... PG-TO220-3-1 Power Semiconductors Soft Switching Series 12 IHP10T120 Rev. 2.4 Sept. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Soft Switching Series i Figure C. Definition of diodes switching characteristics τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L and Stray capacity C 13 IHP10T120 τ τ =180nH σ ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors Soft Switching Series 14 IHP10T120 Rev. 2.4 Sept. 07 ...