GT5G131(TE12L,Q) Toshiba, GT5G131(TE12L,Q) Datasheet - Page 5

• Manufacturer Part Number: GT5G131(TE12L,Q)
• Description: IGBT 400V 5A 8-SOIC
• Manufacturer: Toshiba

Specifications of GT5G131(TE12L,Q)

• Voltage - Collector Emitter Breakdown (max): 400V
• Vce(on) (max) @ Vge, Ic: 7V @ 3V, 130A
• Current - Collector (ic) (max): 5A
• Power - Max: 1.1W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: *
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 400V
• Collector Current (dc) (max): 50A
• Package Type: SOP
• Pin Count: 8
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

0.1
200
160
120
0.1
10
10
80
40
1
1
0
0
1
0
Tc = 25°C
Gate-emitter voltage V GE (V)
t on
Minimum Gate Drive Area
50
t f
Gate resistance R G (9)
2
Collector current I C (A)
Switching Time – I
Switching Time – R
10
t r
t off
70
t r
100
t off
4
Common emitter
V CC = 300 V
V GE = 3 V
R G = 30 W
Tc = 25°C
100
CP
Common emitter
V CE = 300 V
V GE = 3 V
I C = 130 A
Tc = 25°C
G
150
t f
6
t on
1000
200
8
5
800
600
400
200
500
400
300
200
100
0
0
0
0
V CM = 350 V
Tc < = 70°C
V GE = 4 V
10 W < = R G < = 300 W
V GE
40
Peak collector current I CP (A)
Maximum Operating Area
20
Gate charge Q G (nC)
V CE
V
CE
80
, V
40
GE
– Q
120
Common emitter
V CC = 300 V
R L = 2.3 W
Tc = 25°C
G
60
160
GT5G131
2003-01-31
200
80
10
8
6
4
2
0