GT5G131(TE12L,Q) Toshiba, GT5G131(TE12L,Q) Datasheet - Page 4

• Manufacturer Part Number: GT5G131(TE12L,Q)
• Description: IGBT 400V 5A 8-SOIC
• Manufacturer: Toshiba

Specifications of GT5G131(TE12L,Q)

• Voltage - Collector Emitter Breakdown (max): 400V
• Vce(on) (max) @ Vge, Ic: 7V @ 3V, 130A
• Current - Collector (ic) (max): 5A
• Power - Max: 1.1W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: *
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 400V
• Collector Current (dc) (max): 50A
• Package Type: SOP
• Pin Count: 8
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

1.4
1.2
0.8
0.6
0.4
0.2
5
4
3
2
1
0
5
4
3
2
1
0
1
0
-80
0
0
70
70
-40
Gate-emitter voltage V GE (V)
Gate-emitter voltage V GE (V)
1
1
Case temperature Tc (°C)
0
V
GE (OFF)
V
V
2
2
CE
CE
I C = 130 A
40
– V
– V
I C = 130 A
GE
GE
40
– Tc
40
3
3
80
100
Common emitter
V CE = 5 V
I C = 1 mA
100
Common emitter
Tc = -40°C
Common emitter
Tc = 70°C
4
4
120
160
5
5
4
10000
1000
100
10
5
4
3
2
1
0
5
4
3
2
1
0
0
0
1
70
Collector-emitter voltage V CE (V)
70
Gate-emitter voltage V GE (V)
Gate-emitter voltage V GE (V)
1
1
C res
10
C oes
V
V
2
2
C – V
CE
CE
– V
I C = 130 A
– V
CE
GE
GE
3
3
100
100
100
40
Common emitter
V GE = 0 V
f = 1 MHz
Tc = 25°C
40
C ies
Common emitter
Tc = 25°C
Common emitter
Tc = 125°C
I C = 130 A
4
4
GT5G131
2003-01-31
1000
5
5