GT5G131(TE12L,Q) Toshiba, GT5G131(TE12L,Q) Datasheet

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... TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Strobe Flash Applications · 3-V gate drive voltage 3.0 V (min) (@I GE Supplied in compact and thin package requires only a small · mounting area 5th generation (trench gate structure) IGBT · Enhancement-mode · Peak collector current 130 A (max) · ...

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Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) Note 2: Drive operation: Mount on glass epoxy board ...

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I – 200 3.0 160 2.5 3.5 120 2 Common emitter Tc = -40° Collector-emitter voltage V CE (V) I – 200 ...

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V – Common emitter Tc = -40° 130 A 3 100 Gate-emitter voltage V GE (V) V – ...

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Switching Time – off Common emitter 300 130 25°C 0 100 Gate resistance R ...

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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...