GT5G131(TE12L,Q) Toshiba, GT5G131(TE12L,Q) Datasheet
GT5G131(TE12L,Q)
Specifications of GT5G131(TE12L,Q)
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GT5G131(TE12L,Q) Summary of contents
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... TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Strobe Flash Applications • 3-V gate drive voltage 3.0 V (min) (@I GE • Supplied in compact and thin package requires only a small mounting area • 5th generation (trench gate structure) IGBT • Enhancement-mode • Peak collector current: I ...
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Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) Note 2: Drive operation: Mount on glass epoxy board ...
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I – 200 3.0 160 2.5 3.5 120 2 Common emitter Tc = −40° Collector-emitter voltage V CE (V) I – 200 ...
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V – Common emitter Tc = −40° 130 A 3 100 Gate-emitter voltage V GE (V) V – ...
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Switching Time – off Common emitter 300 130 25°C 0 100 Gate resistance R ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...