GT5G131(TE12L,Q) Toshiba, GT5G131(TE12L,Q) Datasheet - Page 2

• Manufacturer Part Number: GT5G131(TE12L,Q)
• Description: IGBT 400V 5A 8-SOIC
• Manufacturer: Toshiba

Specifications of GT5G131(TE12L,Q)

• Voltage - Collector Emitter Breakdown (max): 400V
• Vce(on) (max) @ Vge, Ic: 7V @ 3V, 130A
• Current - Collector (ic) (max): 5A
• Power - Max: 1.1W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: *
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 400V
• Collector Current (dc) (max): 50A
• Package Type: SOP
• Pin Count: 8
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics
Marking
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Thermal resistance
Note 2: Drive operation: Mount on glass epoxy board [1 inch
GT5G131
Characteristics
※
● on lower left of the marking indicates Pin 1.
※
Rise time
Turn-on time
Fall time
Turn-off time
Weekly code: (Three digits)
Type
Lot No.
(Note 2)
Week of manufacture (01 for first week of year, continues up to 52 or 53)
Year of manufacture (One low-order digits of calendar year)
(Ta = = = = 25°C)
V
V
Symbol
R
GE (OFF)
CE (sat)
I
I
C
th (j-a)
GES
CES
t
t
on
off
t
t
ies
r
f
V
V
I
I
V
C
C
GE
CE
CE
3 V
= 1 mA, V
= 130 A, V
0
V
Duty cycle < = 1%
= ±6 V, V
= 400 V, V
= 10 V, V
IN
2
: t
t
r
f
< = 100 ns
< = 100 ns
Test Condition
CE
2
GE
GE
CE
´ 1.5 t]
GE
= 5 V
= 3 V
= 0
= 0, f = 1 MHz
30 W
¾
= 0
300 V
Min
0.5
¾
¾
¾
¾
¾
¾
¾
¾
¾
2800
Typ.
2.2
1.3
1.4
1.5
1.8
¾
¾
¾
¾
GT5G131
2003-01-31
Max
±10
114
1.0
7.0
10
¾
¾
¾
¾
¾
°C/W
Unit
mA
mA
pF
ms
V
V