GT5G131 Toshiba, GT5G131 Datasheet

no-image

GT5G131

Manufacturer Part Number
GT5G131
Description
TRANS IGBT CHIP N-CH 400V 50A 8(2-6J1C)
Manufacturer
Toshiba
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GT5G131
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
GT5G131(TE12L,Q)
Manufacturer:
PANASONIC
Quantity:
2 902
Part Number:
GT5G131(TE12L,Q)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
GT5G131(TE12L.Q)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Strobe Flash Applications
·
·
·
·
·
Maximum Ratings
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/ms.
3-V gate drive voltage: V
Supplied in compact and thin package requires only a small
mounting area
5th generation (trench gate structure) IGBT
Enhancement-mode
Peak collector current: I
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note 1: Drive operation: Mount on glass epoxy board [1 inch
Characteristics
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
(Ta = = = = 25°C)
C
GE
Pulse
= 130 A (max)
(Note 1)
1 ms
DC
DC
= 3.0 V (min) (@I
Symbol
V
V
V
T
I
P
CES
GES
GES
I
CP
T
stg
GT5G131
C
C
j
C
= 130 A)
-55~150
Rating
400
130
150
1.1
±6
±8
5
1
2
´ 1.5 t]
Unit
°C
°C
W
V
V
A
Weight: 0.080 g (typ.)
Equivalent Circuit
JEDEC
JEITA
TOSHIBA
8
1
7
2
2-6J1C
GT5G131
2003-01-31
6
3
Unit: mm
5
4

Related parts for GT5G131

GT5G131 Summary of contents

Page 1

... A) C Symbol Rating Unit V 400 V CES ±6 V GES V ±8 V GES 130 150 °C j -55~150 T °C stg 2 ´ 1 GT5G131 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1C Weight: 0.080 g (typ.) Equivalent Circuit 2003-01-31 ...

Page 2

... < = 100 Duty cycle < off ¾ (j-a) 2 ´ 1.5 t] Week of manufacture (01 for first week of year, continues 53) Year of manufacture (One low-order digits of calendar year) 2 GT5G131 Min Typ. Max ¾ ¾ ±10 ¾ ¾ 10 ¾ 0.5 1.0 ¾ 2.2 7.0 ¾ ¾ 2800 ¾ ...

Page 3

... Collector-emitter voltage V CE (V) 200 160 120 Collector-emitter voltage 2.5 2 1.5 1 0.5 Common emitter -80 - Case temperature Tc (°C) 3 GT5G131 I – 3.0 2 2.0 V Common emitter Tc = 25° – 3.5 3.0 2 2.0 V Common emitter Tc = 125° – ...

Page 4

... Gate-emitter voltage Gate-emitter voltage V GE (V) 10000 1000 100 C res 10 160 1 10 Collector-emitter voltage V CE (V) 4 GT5G131 V – Common emitter Tc = 25° 130 A 100 – Common emitter Tc = 125°C 100 130 A ...

Page 5

... Maximum Operating Area 800 600 400 350 V 200 Tc < = 70° < < = 300 W 0 200 0 40 Peak collector current GT5G131 – Common emitter 300 2 25°C ...

Page 6

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 GT5G131 000707EAA 2003-01-31 ...

Related keywords