APT35GN120L2DQ2G Microsemi Power Products Group, APT35GN120L2DQ2G Datasheet - Page 4

• Manufacturer Part Number: APT35GN120L2DQ2G
• Description: IGBT 1200V 94A 379W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT35GN120L2DQ2G

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 35A
• Current - Collector (ic) (max): 94A
• Power - Max: 379W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GN120L2DQ2GMI; APT35GN120L2DQ2GMI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
12000
10000
25000
20000
15000
10000
8000
6000
4000
2000
5000
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
30
25
20
15
10
80
70
60
50
40
30
20
10
5
0
0
0
0
I
I
CE
CE
I
CE
V
V
R
V
T
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
CE
GE
G
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C
= 2.2Ω
= 2.2Ω
= 800V
= +15V
= 800V
=
R
2.2Ω, L
G
, GATE RESISTANCE (OHMS)
,
T
J
=125°C
=
100
µ
V
H, V
GE
CE
= 15V
=
800V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
I
CE
CE
I
CE
V
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
=
T
=
J
2.2Ω
, JUNCTION TEMPERATURE (°C)
V
800V
GE
=15V,T
J
=25°C
T
J
=
25°C, V
V
GE
=15V,T
GE
=
15V
J
=125°C