APT35GN120L2DQ2G Microsemi Power Products Group, APT35GN120L2DQ2G Datasheet

IGBT 1200V 94A 379W TO264

APT35GN120L2DQ2G

Manufacturer Part Number
APT35GN120L2DQ2G
Description
IGBT 1200V 94A 379W TO264
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT35GN120L2DQ2G.pdf (9 pages)

Specifications of APT35GN120L2DQ2G

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 35A
Current - Collector (ic) (max)
94A
Power - Max
379W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT35GN120L2DQ2GMI
APT35GN120L2DQ2GMI
TYPICAL PERFORMANCE CURVES
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior V
parameter distribution and slightly positive V
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
• 10µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V NPT Field Stop
SSOA
(BR)CES
R
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
GINT
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(on)
CE(on)
performance. Easy paralleling results from very tight
1
(V
CE
CE
CE
@ T
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
CE(on)
®
GE
GE
C
C
C
GE
GE
= 150°C
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
temperature coefficient. Built-in
C
GE
= 1mA, T
GE
GE
C
C
= 0V, I
= 35A, T
= 35A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 250µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
APT35GN120L2DQ2(G)
1200
MIN
1.4
APT35GN120L2DQ2
APT35GN120L2DQ2G*
5
105A @ 1200V
-55 to 150
APT35GN120L2DQ2(G)
1200
TYP
±30
105
379
300
5.8
1.7
1.9
94
46
6
1200V
G
G
C
E
MAX
TBD
200
600
6.5
2.1
TO-264
Max
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

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APT35GN120L2DQ2G Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT35GN120L2DQ2(G) APT35GN120L2DQ2 APT35GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-264 Max 25°C unless otherwise specified. C APT35GN120L2DQ2(G) 1200 ± 105 105A @ 1200V 379 -55 to 150 300 MIN TYP ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

V , COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 100 250µs PULSE TEST<0.5 % DUTY CYCLE ...

Page 4

V = 15V 800V 25°C T =125° 2.2Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE ...

Page 5

TYPICAL PERFORMANCE CURVES 4,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.35 0.9 0.30 0.25 0.7 0.20 0.5 0.15 0.3 0.10 0.05 0.1 0. ...

Page 6

APT40DQ120 90% Gate Voltage t d(off) CollectorVoltage 90 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t d(on Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. Forward Voltage 5000 T = ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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