APT35GN120L2DQ2G Microsemi Power Products Group, APT35GN120L2DQ2G Datasheet - Page 3

• Manufacturer Part Number: APT35GN120L2DQ2G
• Description: IGBT 1200V 94A 379W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT35GN120L2DQ2G

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 35A
• Current - Collector (ic) (max): 94A
• Power - Max: 379W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GN120L2DQ2GMI; APT35GN120L2DQ2GMI

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
120
100
100
3.5
2.5
1.5
1.0
0.5
80
60
40
20
80
60
40
20
0
0
4
3
2
0
-50
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
-25
J
2
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
10
I
C
4
0
15V
T
= 17.5A
J
4
= -55°C
T
J
T
25
= 25°C
6
I
J
C
= 125°C
12V
= 35A
12
6
I
11V
C
50
8
= 70A
<0.5 % DUTY CYCLE
250µs PULSE TEST
10V
8
10
75
T
14
J
= 25°C.
9V
10
J
100 125
12
8V
= 25°C)
7V
16
12
14
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
120
100
140
120
100
2.5
1.5
0.5
80
60
40
20
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
3
2
1
0
0
-50
-50
V
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
Lead Temperature
Lead Temperature
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 35A
-25
-25
2
V
Limited
Limited
T
I
GE
T
C
50
C
J
= 15V.
= 35A
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
0
V
4
0
V
GATE CHARGE (nC)
CE
CE
15V
= 600V
25
100
= 240V
25
6
I
C
50
= 70A
I
12V
C
50
8
= 17.5A
150
11V
75 100 125 150
10V
10
75
V
9V
200
CE
8V
100
J
12
= 960V
= 125°C)
7V
250
125
14