APT35GN120L2DQ2G Microsemi Power Products Group, APT35GN120L2DQ2G Datasheet - Page 2

• Manufacturer Part Number: APT35GN120L2DQ2G
• Description: IGBT 1200V 94A 379W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT35GN120L2DQ2G

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 35A
• Current - Collector (ic) (max): 94A
• Power - Max: 379W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GN120L2DQ2GMI; APT35GN120L2DQ2GMI

THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
Symbol
SCSOA
Symbol
SSOA
adding to the IGBT turn-on loss. (See Figure 24.)
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
V
t
t
t
t
C
E
E
E
E
R
R
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
G
GEP
on1
on2
on1
on2
oes
t
t
t
t
θ
θ
res
ies
off
off
ge
gc
r
r
f
f
g
JC
JC
is external gate resistance, not including R
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages
3
6
4
4
66
4
Gint
nor gate driver impedance. (MIC4452)
55
5
T
15V, L = 100µH,V
Inductive Switching (125°C)
J
Inductive Switching (25°C)
= 150°C, R
T
V
V
J
CC
GE
= 125°C, R
Test Conditions
= 960V, V
Capacitance
Gate Charge
= 0V, V
T
V
V
R
V
R
T
V
V
V
f = 1 MHz
J
CE
CC
CC
I
I
G
I
G
J
GE
GE
GE
C
C
C
= +125°C
= +25°C
= 2.2Ω
= 2.2Ω
= 35A
= 35A
= 35A
= 600V
G
= 800V
= 800V
= 15V
= 15V
= 15V
= 2.2Ω
CE
G
GE
CE
= 2.2Ω
= 25V
7
7
= 15V,
= 1200V
7
, V
7
GE
=
MIN
105
MIN
10
2500
2395
2315
3745
3435
TBD
TBD
TYP
150
120
220
130
300
365
100
TYP
9.5
5.9
15
24
22
55
24
22
MAX
MAX
.33
.61
UNIT
UNIT
°C/W
nC
gm
pF
µ
µ
µ
ns
ns
V
A
s
J
J