FGL40N120ANDTU Fairchild Semiconductor, FGL40N120ANDTU Datasheet - Page 7

• Manufacturer Part Number: FGL40N120ANDTU
• Description: IGBT NPT 1200V 64A TO264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL40N120ANDTU

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 40A
• Current - Collector (ic) (max): 64A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 64 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 64A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FGL40N120ANDTU_NL; FGL40N120ANDTU_NL

FGL40N120AND Rev. A2
Typical Performance Characteristics
Figure 19. Stored Charge
100
90
80
70
60
50
0
10
20
Forward Current , I
1E-3
0.01
0.1
1
di/dt = 200A/
1E-5
30
di/dt = 100A/
0.02
0.5
0.2
0.01
0.05
0.1
40
Figure 21. Transient Thermal Impedance of IGBT
µ
s
µ
F
s
[A]
50
single pulse
1E-4
60
70
1E-3
Rectangular Pulse Duration [sec]
(Continued)
7
0.01
Figure 20. Reverse Recovery Time
400
300
200
100
0
0
0.1
10
Pdm
Pdm
20
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
di/dt = 200A/
Forward Current , I
1
t1
t1
30
t2
t2
µ
s
di/dt = 100A/
40
C
C
F
10
[A]
50
µ
s
60
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