FGH60N60SFDTU Fairchild Semiconductor, FGH60N60SFDTU Datasheet - Page 7

• Manufacturer Part Number: FGH60N60SFDTU
• Description: IGBT 120A 600V FIELD STOP TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH60N60SFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 120A
• Power - Max: 378W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 120 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH60N60SFD Rev. A1
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 21. Stored Charge
Figure 23. Transient Thermal Impedance of IGBT
100
200
100
80
60
40
10
1
5
0
T
J
= 125
Forward Current, I
1
20
Forward Voltage, V
di/dt = 100A/
o
200A/
C
1E-3
0.01
0.1
T
µ
1
1E-5
s
J
= 75
2
single pulse
0.02
0.01
0.05
µ
0.5
0.2
0.1
s
o
C
T
40
J
F
= 25
[A]
F
[V]
T
T
C
C
o
3
C
= 25
= 125
1E-4
o
C
o
C
60
Rectangular Pulse Duration [sec]
4
1E-3
7
Figure 22. Reverse Recovery Time
0.01
Figure 20. Reverse Current
500
100
0.1
10
60
50
40
30
1
0.01
0
5
Duty Factor, D = t1/t2
Peak T
P
DM
Reverse Voltage, V
Forward Current, I
20
j
= Pdm x Zthjc + T
200
0.1
di/dt = 100A/
t
1
200A/
t
2
T
T
C
T
C
C
= 125
= 25
µ
= 75
s
µ
o
s
o
o
C
C
C
C
40
F
R
400
[A]
1
[V]
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600
60