FGH40N60SFDTU Fairchild Semiconductor, FGH40N60SFDTU Datasheet - Page 4
FGH40N60SFDTU
Manufacturer Part Number
FGH40N60SFDTU
Description
IGBT FIELD STOP 600V 80A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH40N60SFDTU.pdf
(9 pages)
Specifications of FGH40N60SFDTU
Igbt Type
Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.9V @ 15V, 40A
Current - Collector (ic) (max)
80A
Power - Max
290W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
80 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FGH40N60SFDTU
Manufacturer:
SEMTECH
Quantity:
114
FGH40N60SFD Rev. C
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
120
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0.0
25
0
T
Common Emitter
V
T
T
C
Common Emitter
V
Temperature at Variant Current Level
GE
C
C
Collector-EmitterCase Temperature, T
GE
Characteristics
= 25
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
C
C
o
C
1.5
50
1
3.0
20V
75
2
I
C
= 20A
80A
40A
15V
V
GE
4.5
100
CE
CE
3
= 8V
12V
[V]
10V
[V]
C
[
o
C
]
6.0
125
4
4
Figure 2. Typical Output Characteristics
Figure 4. Transfer Characteristics
Figure 6. Saturation Voltage vs. V
120
100
120
80
60
40
20
20
16
12
80
40
0
8
4
0
0.0
0
4
6
T
C
Common Emitter
V
T
T
CE
C
C
= 125
= 25
= 125
= 20V
Collector-Emitter Voltage, V
o
o
C
C
o
I
Gate-Emitter Voltage, V
C
C
1.5
Gate-Emitter Voltage,V
8
= 20A
8
40A
3.0
12
20V
10
80A
Common Emitter
T
C
GE
= -40
GE
4.5
16
CE
15V
[V]
[V]
V
o
[V]
C
GE
12V
10V
12
= 8V
GE
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20
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