HGTG30N60B3 Fairchild Semiconductor, HGTG30N60B3 Datasheet - Page 5

• Manufacturer Part Number: HGTG30N60B3
• Description: IGBT UFS N-CHAN 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60B3

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 208 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
300
250
200
150
100
300
250
200
150
100
50
0
10
4
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
FIGURE 13. TRANSFER CHARACTERISTIC
EMITTER CURRENT
I
CE
5
T
T
J
J
, COLLECTOR TO EMITTER CURRENT (A)
20
V
= 150
= 25
GE
, GATE TO EMITTER VOLTAGE (V)
o
6
o
C, V
C, V
T
GE
C
GE
30
= 25
CE
= 10V, V
7
= 10V, V
= 10V
o
C
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
GE
8
GE
40
= 15V
= 15V
10
8
6
4
2
0
T
R
0
Unless Otherwise Specified (Continued)
C
G
9
= -55
= 3 , L = 1mH,
50
C
V
T
o
OES
CE
V
C
C
10
CE
= 150
= 480V
5
, COLLECTOR TO EMITTER VOLTAGE (V)
C
o
RES
C
60
11
10
C
IES
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
15
16
14
12
10
120
100
FREQUENCY = 1MHz
8
6
4
2
0
80
60
40
0
10
I
R
g (REF)
G
FIGURE 14. GATE CHARGE WAVEFORMS
= 3 , L = 1mH, V
20
CURRENT
I
CE
T
= 1mA, R
J
, COLLECTOR TO EMITTER CURRENT (A)
= 150
20
50
V
o
V
CE
25
C, V
L
Q
CE
= 10 , T
G
= 400V
CE
= 600V
, GATE CHARGE (nC)
GE
30
= 480V
= 10V AND 15V
T
J
C
100
V
= 25
= 25
CE
o
o
= 200V
C, V
C
40
GE
= 10V AND 15V
150
HGTG30N60B3 Rev. B3
50
200
60