HGTG12N60A4 Fairchild Semiconductor, HGTG12N60A4 Datasheet - Page 5

• Manufacturer Part Number: HGTG12N60A4
• Description: IGBT N-CH SMPS 600V 54A TO247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG12N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTG12N60A4_NL; HGTG12N60A4_NL

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
250
200
150
100
115
110
105
100
50
1.2
1.0
0.8
0.6
0.4
0.2
95
90
85
0
0
6
25
2
R
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
R
FIGURE 13. TRANSFER CHARACTERISTIC
G
E
G
TOTAL
= 10 , L = 500 H, V
= 10 , L = 500 H, V
4
7
EMITTER CURRENT
TEMPERATURE
I
CE
= E
6
, COLLECTOR TO EMITTER CURRENT (A)
50
8
V
ON2
GE
T
8
, GATE TO EMITTER VOLTAGE (V)
C
9
+ E
, CASE TEMPERATURE (
10
OFF
10
75
CE
CE
CE
V
V
GE
GE
12
= 390V
= 10V
= 390V, V
11
= 12V, V
= 12V, V
14
T
100
J
12
GE
= -55
I
I
GE
GE
16
CE
CE
I
CE
= 15V
Unless Otherwise Specified (Continued)
= 15V, T
= 24A
= 15V, T
= 12A
13
= 6A
o
T
C
18
J
o
= 25
C)
125
14
T
J
20
J
o
J
= 125
C
= 25
= 125
15
22
o
o
C
o
C
C
150
24
16
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
16
14
12
10
0.1
8
6
4
2
0
10
90
80
70
60
50
40
30
20
10
1
0
2
5
I
G(REF)
V
T
E
FIGURE 14. GATE CHARGE WAVEFORMS
J
CE
TOTAL
= 125
4
10
= 600V
R
10
CURRENT
= 1mA, R
I
I
I
I
G
CE
CE
CE
CE
o
= E
= 10 , L = 500 H, V
6
V
C, L = 500 H, V
, COLLECTOR TO EMITTER CURRENT (A)
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
= 24A
= 12A
= 6A
CE
20
ON2
T
= 200V
J
8
L
R
= 125
+ E
= 25 , T
G
Q
V
, GATE RESISTANCE ( )
G
30
OFF
CE
10
, GATE CHARGE (nC)
o
C, V
= 400V
CE
C
12
GE
= 25
40
CE
T
= 390V, V
J
= 12V OR 15V
100
= 25
14
= 390V
o
C
o
50
C, V
16
GE
GE
= 15V
18
60
= 12V OR 15V
20
70
22
1000
24
80