HGTG11N120CND Fairchild Semiconductor, HGTG11N120CND Datasheet - Page 4

• Manufacturer Part Number: HGTG11N120CND
• Description: IGBT NPT N-CH 1200V 43A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG11N120CND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 11A
• Current - Collector (ic) (max): 43A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 43 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 43 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 43A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 43A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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