HGTG20N60B3 Fairchild Semiconductor, HGTG20N60B3 Datasheet - Page 3

• Manufacturer Part Number: HGTG20N60B3
• Description: IGBT UFS N-CHAN 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG20N60B3

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 165W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 165 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 165W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
FIGURE 3. DC COLLECTOR CURRENT vs CASE
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER
5000
4000
3000
2000
1000
100
50
40
30
20
10
80
60
40
20
0
0
0
25
4
0
FIGURE 1. TRANSFER CHARACTERISTICS
PULSE DURATION = 250 s
DUTY CYCLE <0.5%, V
C
C
C
T
T
T
TEMPERATURE
VOLTAGE
IES
OES
RES
C
C
C
V
= 25
= -40
CE
= 150
50
V
5
, COLLECTOR TO EMITTER VOLTAGE (V)
GE
T
o
C
o
C
o
6
C
, GATE TO EMITTER VOLTAGE (V)
, CASE TEMPERATURE (
C
75
10
CE
V
GE
= 10V
8
= 15V
100
15
FREQUENCY = 1MHz
o
C)
10
125
20
150
12
25
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
600
480
360
240
120
100
0
80
60
40
20
100
0
80
60
40
20
0
0
0
FIGURE 2. SATURATION CHARACTERISTICS
0
PULSE DURATION = 250 s
DUTY CYCLE <0.5%, V
FIGURE 6. GATE CHARGE WAVEFORMS
T
C
V
= 25
V
CE
20
CE
V
GE
2
, COLLECTOR TO EMITTER VOLTAGE (V)
o
, COLLECTOR TO EMITTER VOLTAGE (V)
1
C
V
V
= 15V
CE
Q
CE
G
T
= 600V
, GATE CHARGE (nC)
C
= 200V
40
= -40
4
2
12V
GE
o
C
V
CE
= 15V
PULSE DURATION = 250 s
DUTY CYCLE <0.5%
= 400V
60
T
T
C
C
6
V
3
V
V
V
V
= 150
I
R
= 25
g(REF)
V
GE
GE
GE
GE
GE
L
GE
= 30
= 7.5V
= 8.5V
o
= 8.0V
= 7.0V
= 10V
o
C
= 9V
C
80
HGTG20N60B3 Rev.B3
= 1.685mA
T
C
8
4
= 25
o
100
C
15
12
9
6
3
0
10
5