HGT1S10N120BNS Fairchild Semiconductor, HGT1S10N120BNS Datasheet

IGBT NPT N-CHAN 1200V TO-263AB

HGT1S10N120BNS

Manufacturer Part Number
HGT1S10N120BNS
Description
IGBT NPT N-CHAN 1200V TO-263AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGT1S10N120BNS

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 10A
Current - Collector (ic) (max)
35A
Power - Max
298W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
35 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
298 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
35 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
HGT1S10N120BNS
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGT1S10N120BNS
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
HGT1S10N120BNS
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Company:
Part Number:
HGT1S10N120BNS
Quantity:
4 500
Part Number:
HGT1S10N120BNST
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
HGT1S10N120BNST
0
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and
HGT1S10N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49290.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNST.
Symbol
©2002 Fairchild Semiconductor Corporation
HGTG10N120BN
HGTP10N120BN
HGT1S10N120BNS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-247
TO-220AB
TO-263AB
PACKAGE
E
C
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
G10N120BN
10N120BN
10N120BN
BRAND
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
HGTG10N120BN, HGTP10N120BN,
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• 35A, 1200V, T
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
• Related Literature
Packaging
Temperature Compensating SABER™ Model
www.fairchildsemi.com
- TB334 “Guidelines for Soldering Surface Mount
COLLECTOR
(FLANGE)
Components to PC Boards
COLLECTOR
(FLANGE)
JEDEC TO-220AB (ALTERNATE VERSION)
August 2002
G
E
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
C
= 25
JEDEC STYLE TO-247
JEDEC TO-263AB
HGT1S10N120BNS
o
C
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
COLLECTOR
(FLANGE)
G
C
E
E
4,587,713
4,644,637
4,801,986
4,883,767
C
J
= 150
G
o
C

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HGT1S10N120BNS Summary of contents

Page 1

... Data Sheet 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor ...

Page 2

... CM 20 GES 30 GEM 55A at 1200V 298 D 2. -55 to 150 J STG 300 L 260 pkg MIN TYP 1200 - 125 C - 150 150 2. 150 C - 3.7 C 6.0 6 15V 1200V - 10 15V - 100 20V - 130 GE HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1 UNITS MAX UNITS - 250 2 250 120 nC 150 nC ...

Page 3

... IGBT only. E ON1 as the IGBT. The diode type is specified 150 15V 400 200 400 600 800 V , COLLECTOR TO EMITTER VOLTAGE (V) CE HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1 MAX UNITS 210 ns 140 ns 0.4 mJ 1 250 ns 200 ns 0.5 mJ 2.3 mJ 1.4 ...

Page 4

... FIGURE 4. SHORT CIRCUIT WITHSTAND TIME - DUTY CYCLE <0.5%, V PULSE DURATION = 250 COLLECTOR TO EMITTER VOLTAGE ( 2mH 960V 150 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1 250 200 I SC 150 100 150 C = 15V 12V OR 15V ...

Page 5

... EMITTER CURRENT 300 2mH 250 200 150 12V OR 15V J GE 150 100 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA (REF 800V 1200V 400V GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev 12V o = 150 15V 960V 120 100 ...

Page 6

... FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE DUTY FACTOR PEAK RECTANGULAR PULSE DURATION (s) 1 HGTG10N120BND 960V DUTY CYCLE <0.5 110 C C PULSE DURATION = 250 15V COLLECTOR TO EMITTER VOLTAGE ( 90% 10% E ON2 E OFF 90% 10% t d(OFF FIGURE 19. SWITCHING TEST WAVEFORMS HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev 10V d(ON)I ...

Page 7

... A 50% duty factor was used (Figure 3) and D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in the ; i.e., the collector current equals zero OFF HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev d(OFF)I ). The ON2 - T )/ ...

Page 8

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