ISL9V3036D3ST Fairchild Semiconductor, ISL9V3036D3ST Datasheet

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ISL9V3036D3ST

Manufacturer Part Number
ISL9V3036D3ST
Description
IGBT N-CHAN 360V 300MJ TO-252AA
Manufacturer
Fairchild Semiconductor
Series
EcoSPARK™r
Datasheet

Specifications of ISL9V3036D3ST

Voltage - Collector Emitter Breakdown (max)
360V
Vce(on) (max) @ Vge, Ic
1.6V @ 4V, 6A
Current - Collector (ic) (max)
21A
Power - Max
150W
Input Type
Logic
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Electronic Ignition Drivers
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
©2004 Fairchild Semiconductor Corporation
G
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
EcoSPARK
General Description
The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the
next generation IGBTs that offer outstanding SCIS capability in the
space saving D-Pak (TO-252), as well as the industry standard D²-
Pak (TO-263) and TO-220 plastic packages. These devices are
intended for use in automotive ignition circuits, specifically as a coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49442
Device Maximum Ratings
Package
JEDEC TO-252AA
E
E
Symbol
E
BV
BV
SCIS150
V
I
T
SCIS25
ESD
T
I
C110
C25
GEM
P
D-Pak
T
STG
T
pkg
COLLECTOR
CER
ECS
D
J
L
(FLANGE)
Collector to Emitter Breakdown Voltage (I
Emitter to Collector Voltage - Reverse Battery Condition (I
T
T
Collector Current Continuous, At T
Collector Current Continuous, At T
Gate to Emitter Voltage Continuous
Power Dissipation Total T
Power Dissipation Derating T
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
G
J
J
TM
E
= 25°C, I
= 150°C, I
JEDEC TO-263AB
300mJ, 360V, N-Channel Ignition IGBT
D²-Pak
SCIS
SCIS
COLLECTOR
(FLANGE)
= 14.2A, L = 3.0 mHy
= 10.6A, L = 3.0 mHy
C
T
= 25°C
J
JEDEC TO-220AB
= 25°C unless otherwise noted
C
> 25°C
Parameter
C
C
= 25°C, See Fig 9
= 110°C, See Fig 9
C
= 1 mA)
Symbol
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Industry Standard D
• SCIS Energy = 300mJ at T
• Logic Level Gate Drive
E
C
G
C
= 10 mA)
GATE
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
2
-Pak package
R
R
J
1
2
= 25
-40 to 175
-40 to 175
o
Ratings
C
360
300
170
±10
150
300
260
1.0
24
21
17
4
EMITTER
COLLECTOR
October 2004
Units
W/°C
mJ
mJ
°C
°C
°C
°C
kV
W
V
V
V
A
A

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ISL9V3036D3ST Summary of contents

Page 1

... Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s Max Lead Temp for Soldering (Package Body for 10s) pkg ESD Electrostatic Discharge Voltage at 100pF, 1500 ©2004 Fairchild Semiconductor Corporation Applications • Automotive Ignition Coil Driver Circuits • Coil- On Plug Applications Features • Industry Standard D • SCIS Energy = 300mJ at T • ...

Page 2

... Package Marking and Ordering Information Device Marking Device V3036D ISL9V3036D3ST V3036S ISL9V3036S3ST V3036P ISL9V3036P3 V3036D ISL9V3036D3S V3036S ISL9V3036S3S Electrical Characteristics Symbol Parameter Off State Characteristics BV Collector to Emitter Breakdown Voltage I CER BV Collector to Emitter Breakdown Voltage I CES BV Emitter to Collector Breakdown Voltage I ECS BV Gate to Emitter Breakdown Voltage ...

Page 3

... Junction Temperature 1.0 2 COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 5. Collector to Emitter On-State Voltage vs Collector Current ©2004 Fairchild Semiconductor Corporation 14V 25° SCIS Curves valid for 125 150 175 200 Figure 2. Self Clamped Inductive Switching 1.8 I 1.7 1.6 1 ...

Page 4

... Figure 9. DC Collector Current vs Case Temperature 10000 V 1000 100 300V CES 1 0.1 -50 - JUNCTION TEMPERATURE (°C) J Figure 11. Leakage Current vs Junction Temperature ©2004 Fairchild Semiconductor Corporation (Continued) 25 DUTY CYCLE < 0.5 175° 3.0 4.0 1.0 Figure 8. Transfer Characteristics 2 4.0V GE 2.0 1.8 1.6 1.4 1 ...

Page 5

... Figure 15. Breakdown Voltage vs Series Gate Resistance 0 10 0.5 0.2 0.1 0. 0.02 0.01 SINGLE PULSE - Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case ©2004 Fairchild Semiconductor Corporation (Continued FREQUENCY = 1 MHz G(REF 100 R , SERIES GATE RESISTANCE ( ) RECTANGULAR PULSE DURATION (s) ...

Page 6

... Test Circuit and Waveforms R G PULSE DUT GEN G Figure 17. Inductive Switching Test Circuit VARY t TO OBTAIN P R REQUIRED PEAK Figure 19. Unclamped Energy Test Circuit ©2004 Fairchild Semiconductor Corporation Figure 18 DUT 0.01 Figure 20. Unclamped Energy Waveforms R or LOAD DUT - E and t Switching Test Circuit ...

Page 7

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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