FGH20N60SFDTU Fairchild Semiconductor, FGH20N60SFDTU Datasheet - Page 5

• Manufacturer Part Number: FGH20N60SFDTU
• Description: IGBT 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH20N60SFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 165W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH20N60SFD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
2500
2000
1500
1000
0.01
500
100
0.1
20
16
12
10
0
8
4
0
1
0.1
0
1
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
4
Gate-Emitter Voltage, V
I
C
20A
= 10A
C
C
C
ies
10
res
oes
8
1
40A
12
Common Emitter
V
T
GE
C
100
Common Emitter
T
C
= 25
= 0V, f = 1MHz
GE
= 25
CE
10 ms
100
1ms
o
CE
[V]
[V]
GE
DC
C
o
16
10
C
[V]
µ
s
10
µ
s
1000
20
30
5
Figure 8. Saturation Voltage vs. V
100
Figure 10. Gate charge Characteristics
15
12
10
20
16
12
9
6
3
0
5
Figure 12. Turn-on Characteristics vs.
8
4
0
0
0
0
Common Emitter
T
C
= 25
10
o
C
4
I
C
Gate-Emitter Voltage, V
20
t
t
d(on)
= 10A
r
Gate Resistance, R
V
Gate Charge, Q
CC
20
= 100V
Gate Resistance
8
40
30
Common Emitter
V
I
T
T
C
20A
C
C
CC
= 20A
12
g
= 25
= 125
= 400V, V
[nC]
40
G
Common Emitter
T
300V
o
C
[
200V
C
o
Ω
GE
40A
= 125
C
60
]
[V]
16
GE
50
o
C
= 15V
GE
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80
60
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