FGA25N120ANTDTU Fairchild Semiconductor, FGA25N120ANTDTU Datasheet - Page 7

• Manufacturer Part Number: FGA25N120ANTDTU
• Description: IGBT NPT TRENCH 1200V 50A TO3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120ANTDTU

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 312W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 50 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FGA25N120ANTDTU_NL; FGA25N120ANTDTU_NL

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Typical Performance Characteristics
Figure 18. Forward Characteristics
Figure 20. Stored Charge
0.1
4000
3000
2000
1000
50
10
1
0.0
0
T
0.4
J
5
= 125
Forward Voltage , V
°
C
Forward Current , I
0.8
di/dt = 200A/
10
T
1.2
J
µ
= 25
s
di/dt = 100A/
15
°
F
C
F
[V]
T
T
[A]
1.6
C
C
= 125
= 25
µ
s
20
°
°
C
C
2.0
25
(Continued)
7
Figure 19. Reverse Recovery Current
Figure 21. Reverse Recovery Time
300
200
100
30
25
20
15
10
5
0
0
5
di/dt = 100A/
5
di/dt = 200A/
Forward Current , I
Forward Current , I
10
10
µ
s
µ
di/dt = 200A/
s
di/dt = 100A/
15
15
F
µ
F
[A]
s
[A]
µ
s
20
20
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25
25