SGS5N150UFTU Fairchild Semiconductor, SGS5N150UFTU Datasheet - Page 3

• Manufacturer Part Number: SGS5N150UFTU
• Description: IGBT SWITCHING 1500V 5A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of SGS5N150UFTU

• Voltage - Collector Emitter Breakdown (max): 1500V
• Vce(on) (max) @ Vge, Ic: 5.5V @ 10V, 5A
• Current - Collector (ic) (max): 10A
• Power - Max: 50W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2003 Fairchild Semiconductor Corporation
Fig 5. Load Current vs. Frequency
Fig 1. Typical Output Characteristics
Fig 3. Maximum Collector Current vs.
80
70
60
50
40
30
20
10
12
10
10
8
6
4
2
0
0
8
6
4
2
0
0.1
25
0
Duty cycle : 50%
Tc = 100
Power Dissipation = 12W
Case Temperature
o
50
C
1
5
Frequency [kHz]
75
Vcc = 600V
Load Current : peak of square wave
Tc [ ℃ ]
Vce [V]
10
10
100
100
15
125
Vge = 10V
Vge=5 V
15 V
10 V
20 V
1000
150
20
Fig 6. Transient Thermal Impedance
0.01
50
40
30
20
10
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
0.1
Fig 4. Saturation Voltage vs.
0
Fig 2. Typical Output Characteristics
10
1
1E-5
0
20
0.02
0.01
0.1
0.05
Vge=10V
0.5
0.2
single pulse
of IGBT Junction to Case
Case Temperature
1E-4
40
4
Rectangular Pulse Duration [sec]
60
1E-3
8
Tc [ ℃ ]
Vce [V]
80
0.01
Pdm
12
Tc = 25℃
100
Duty factor D = t1 / t2
Peak Tj = Pdm
0.1
t1
120
t2
Tc = 100℃
16
Ic =10A
Ic = 5A
Vge=10V
1
Zthjc + T
140
SGS5N150UF Rev. B
C
20
10