SGS5N150UFTU Fairchild Semiconductor, SGS5N150UFTU Datasheet
SGS5N150UFTU
Specifications of SGS5N150UFTU
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SGS5N150UFTU Summary of contents
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... Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2003 Fairchild Semiconductor Corporation Features • High Speed Switching • Low Saturation Voltage : V • High Input Impedance TO-220F unless otherwise noted C Description ...
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... Turn-Off Delay Time d(off) t Fall Time f E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc ©2003 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 1mA 1500 CES ...
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... Fig 3. Maximum Collector Current vs. Case Temperature 10 Vcc = 600V Load Current : peak of square wave Duty cycle : 50 100 C Power Dissipation = 12W 0 0 Frequency [kHz] Fig 5. Load Current vs. Frequency ©2003 Fairchild Semiconductor Corporation 20 V Vge=10V Vge Fig 2. Typical Output Characteristics 8.0 Vge = 10V 7.5 7.0 6 ...
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... Fig 9. Typical Switching Loss vs. Gate Resistance 1.2 Vcc = 600V 100℃ 1.0 0.8 0.6 0.4 0 [A] Fig 11. Typical Switching Loss vs. Collector Current ©2003 Fairchild Semiconductor Corporation Common Emitter Cies Coes Fig 8. Typical Gate Charge Characteristic 1200 Vcc = 600V Vge = 10V Esw ...
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... Package Dimension TO-220F (FS PKG CODE AQ) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2003 Fairchild Semiconductor Corporation ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters SGS5N150UF Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...