FFPF10H60STU Fairchild Semiconductor, FFPF10H60STU Datasheet

IC DIODE HYPERFAST 600V TO220F-2

FFPF10H60STU

Manufacturer Part Number
FFPF10H60STU
Description
IC DIODE HYPERFAST 600V TO220F-2
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FFPF10H60STU

Voltage - Forward (vf) (max) @ If
2.5V @ 10A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
1mA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
40ns
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack, ITO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
©2006 Fairchild Semiconductor Corporation
FFPF10H60S Rev. A
FFPF10H60S
Hyperfast 2 Rectifier
Features
• High Speed Switching ( t
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
• Low Forward Voltage( V
Applications
• General Purpose
• Switching Mode Power Supply
• Free-wheeling diode for motor application
• Power switching circuits
Pin Assignments
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering
V
V
V
I
I
T
R
Device Marking
F(AV)
FSM
J,
RRM
RWM
R
θJC
Symbol
T
Symbol
STG
F10H60S
Maximum Thermal Resistance, Junction to Case
1. Cathode 2. Anode
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
FFPF10H60STU
F
rr
=2.1V(Typ.) @ I
=25ns(Typ.) @ I
Device
TO-220F-2L
T
C
= 25°C unless otherwise noted
F
Parameter
F
=10A )
T
=10A )
C
= 25°C unless otherwise noted
Parameter
Package
Information
TO-220F
@ T
1
10A, 600V Hyperfast 2 Rectifier
The FFPF10H60S is hyperfast2 rectifier (t
I
silicon nitride passivated ion-implanted epitaxial planar con-
struction.
This device is intended for use as freewheeling/clamping rectifi-
ers in a variety of switching power supplies and other power
swithching applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transis-
tors.
C
F
=10A). it has half the recovery time of ultrafast rectifier and is
= 85 °C
Reel Size
-
1. Cathode
1
Tape Width
Max
3.4
- 65 to +150
Value
-
2. Anode
600
600
600
100
10
2
rr
Quantity
=25ns(Typ.) @
www.fairchildsemi.com
Units
Units
°C/W
April 2007
50
°C
V
V
V
A
A
tm

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FFPF10H60STU Summary of contents

Page 1

... Thermal Characteristics Symbol R Maximum Thermal Resistance, Junction to Case θJC Package Marking and Ordering Device Marking Device F10H60S FFPF10H60STU ©2006 Fairchild Semiconductor Corporation FFPF10H60S Rev. A 10A, 600V Hyperfast 2 Rectifier =10A ) The FFPF10H60S is hyperfast2 rectifier ( =10A). it has half the recovery time of ultrafast rectifier and is ...

Page 2

Electrical Characteristics Parameter 10A 10A 600V 600V =1A, di/dt = 100A/µ =10A, di/dt = 50A/µs, V ...

Page 3

Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop 100 =125 =75 C 0.1 0.0 0.4 0.8 1.2 1.6 FORWARD VOLTAGE, V Figure 3. Typical Junction Capacitance ...

Page 4

Mechanical Dimensions MAX1.47 0.80 2.54TYP [2.54 FFPF10H60S Rev. A TO-220F 2L ±0.20 ø3.18 ±0.10 10.16 (1.00x45°) ±0.10 0.35 ±0.10 2.54TYP ±0.20 ] [2.54 ±0.20 ] 9.40 ±0.20 4 ±0.20 2.54 (0.70) ±0.20 2.76 +0.10 0.50 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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