BAV19 Fairchild Semiconductor, BAV19 Datasheet - Page 3

DIODE GEN PURP 120V 200MA DO-35

BAV19

Manufacturer Part Number
BAV19
Description
DIODE GEN PURP 120V 200MA DO-35
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BAV19

Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
120V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 100V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
120 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Reverse Current Ir
0.1 uA at 100 V
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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100
Typical Characteristics
1.0
0.001
I
Rloop = 100 Ohms
F
VF - 1.0 uA - 10 mA (-40 to +80 Deg C)
Figure 9. Reverse Recovery Time vs
= I
R
0.003
= 30 mA
Reverse Recovery Current
Figure 7. Forward Voltage
Reverse Recovery Current, I
vs Ambient Temperature
1.5
0.01
F orw ard C urrent, I
0.03
2.0
0.1
Ta= -40 C
Ta= 25 C
Ta= +80 C
500
400
300
200
100
0
0.3
0
F
°
°
[m A ]
°
°
SOT-23 Pkg
rr
2.5
Figure 11. Power Derating Curve
[mA]
(continued)
1
Average Temperature, I
50
3
3.0
10
DO-35 Pkg
100
O
1.3
1.2
1.1
1.0
0.9
0.8
400
300
200
100
[ C]
Figure 10. Average Rectified Current (I
0
150
0
0
Ta= 25 C
versus Ambient Temperature (T
2
°
Figure 8. Total Capacitance
Ambient Temperature, T
200
4
50
Reverse Voltage [V]
Small Signal Diode
6
8
100
10
A
[ C]
12
BAV19/20/21, Rev. C
(continued)
150
A
)
F(AV)
14
)

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