IDV02S60C Infineon Technologies, IDV02S60C Datasheet - Page 7

• Manufacturer Part Number: IDV02S60C
• Description: DIODE SCHOTTKY 600V 2A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDV02S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.9V @ 2A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 1.9V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 11.5A
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 2.0 A
• Qc (typ): 3.2 nC
• Package: TO-220 FullPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDT02S60C; IDT02S60C; SP000274984; SP000659198

Final Data Sheet
Table 9
1) Only capacitive charge occuring, guaranteed by design
Table 10
Typ. capacitance charge vs. current slope
Q
Typ. transient thermal impedance
Z
thjc
D
=f(diF/dt)4); Tj= 150 °C; I
=f(tp)
;
parameter: D = t
P
F
/ T
≤ I
F max
1)
2nd Generation thinQ!™ SiC Schottky Diode
7
Typ. reverse current vs. reverse voltage
I
Typ. capacitance vs. reverse voltage
C=f(V
R
=f(V
R
R
); T
)
C
=25 °C, f=1 MHz
Electrical characteristics diagrams
Rev. 2.0, 2010-05-31
IDV02S60C