IDV02S60C Infineon Technologies, IDV02S60C Datasheet - Page 6

• Manufacturer Part Number: IDV02S60C
• Description: DIODE SCHOTTKY 600V 2A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDV02S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.9V @ 2A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 1.9V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 11.5A
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 2.0 A
• Qc (typ): 3.2 nC
• Package: TO-220 FullPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDT02S60C; IDT02S60C; SP000274984; SP000659198

5
Final Data Sheet
Table 7
Table 8
Power dissipation
P
Typ. forward characteristic
I
F
tot
=f(V
= f(
F
T
); t
C
)
p
=400 µs; parameter: T
Electrical characteristics diagrams
j
2nd Generation thinQ!™ SiC Schottky Diode
6
Diode forward current
I
I
Typ. forward characteristic in surge current
F
F
=f(T
=f(V
C
F
); T
); t
p
=400 µs; parameter: T
j
≤ 175 °C
Electrical characteristics diagrams
j
Rev. 2.0, 2010-05-31
IDV02S60C