IDV02S60C Infineon Technologies, IDV02S60C Datasheet - Page 2

• Manufacturer Part Number: IDV02S60C
• Description: DIODE SCHOTTKY 600V 2A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDV02S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.9V @ 2A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 1.9V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 11.5A
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 2.0 A
• Qc (typ): 3.2 nC
• Package: TO-220 FullPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDT02S60C; IDT02S60C; SP000274984; SP000659198

2nd Generation thinQ!™ SiC Schottky Diode
1
The second generation of Infineon SiC Schottky diodes has emerged over the
years as the industry standard. The IDVxxS60C family is extending the already
broad portfolio with the TO220FullPAK package. In order to greatly reduce the
impact of the internal isolation of the FullPAK on the thermal performance, Infineon
is applying its patented diffusion soldering process for attaching the chip to the
leadframe. The result is nearly identical thermal characteristics to those of the SiC
diodes in the non-isolated TO220 package.
Features
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Benefits
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Applications
Fully isolated TO220 package for e.g. CCM PFC; Motor Drives; Solar Applications; UPS
Table 1
Table 2
1) J-STD20 and JESD22
Final Data Sheet
Parameter
V
Q
I
Pin 1
C
Type / Ordering Code
IDV02S60C
F
DC
C
@ T
Revolutionary semiconductor material - Silicon Carbide
Nearly no reverse / forward recovery charge
High surge current capability
Fully isolated package with nearly similar Rth,jc as the standard T0220
Suitable for high temperature operation
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
Switching behavior independent of forward current, switching speed and
temperature
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Good thermal performance without the need for additional isolation layer and washer
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures and less fans
Reduced EMI
C
< 120°C
Description
Key Performance Parameters
Pin Definition
Value
600
3.2
2
Pin2
A
Package
PG-TO220 FullPAK
1)
Unit
V
nC
A
for target applications
Pin 3
n.a.
2
D02S60C
Marking
Related Links
IFX SiC Diodes Webpage
Rev. 2.0, 2010-05-31
IDV02S60C