IDV02S60C Infineon Technologies, IDV02S60C Datasheet - Page 5

• Manufacturer Part Number: IDV02S60C
• Description: DIODE SCHOTTKY 600V 2A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDV02S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.9V @ 2A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 1.9V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 11.5A
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 2.0 A
• Qc (typ): 3.2 nC
• Package: TO-220 FullPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDT02S60C; IDT02S60C; SP000274984; SP000659198

4
Table 5
Parameter
DC blocking voltage
Diode forward voltage
Reverse current
Table 6
Parameter
Total capacitive charge
Switching time
1)
t
Final Data Sheet
rr
t
which is dependent on T
c
is the time constant for the capacitive displacement current waveform (independent from T
Electrical characteristics
Static characteristics
AC characteristics
1)
j
, I
LOAD
and di/dt. No reverse recovery time constant t
Symbol
V
V
I
R
DC
F
Symbol
Q
t
C
c
c
Min.
600
-
-
-
-
Min.
-
-
-
-
-
2nd Generation thinQ!™ SiC Schottky Diode
5
Typ.
-
1.7
2.1
0.23
1
Values
Typ.
3.2
-
60
8
8
Values
Max.
-
1.9
2.6
15
150
Max.
-
<10
-
-
-
rr
due to absence of minority carrier injection.
Unit
V
µA
Unit
nC
ns
pF
j
, I
Note / Test Condition
T
I
I
I
I
Electrical characteristics
LOAD
F
F
R
R
j
= 25 °C,
= 2 A,
= 2 A,
= 600 V,
= 600 V,
Note /
Test Condition
V
di
T
V
V
V
and di/dt), different from
Rev. 2.0, 2010-05-31
j
R
R
R
R
F
=150 °C
= 400 V, F ≤I F
= 1 V, f= 1 MHz
= 300 V, f= 1 MHz
= 600 V, f= 1 MHz
/dt =200 A/μs,
T
T
j
j
= 25 °C
= 150 °C
I
T
T
R
IDV02S60C
j
j
= 0.015 mA
=25 °C
=150 °C
max