IDV02S60C Infineon Technologies, IDV02S60C Datasheet
IDV02S60C
Specifications of IDV02S60C
IDT02S60C
SP000274984
SP000659198
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IDV02S60C Summary of contents
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TM 2 Generation thinQ! Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC • Breakdown voltage tested at ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads Electrical characteristics Static characteristics DC blocking voltage Diode forward voltage Reverse current AC characteristics Total capacitive charge 3) Switching time ...
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Power dissipation P =f(T ) tot C parameter: R thJC(max Typ. forward characteristic I =f =400 µ parameter -55º ...
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Typ. capacitance charge vs. current slope 4) Q =f(di / =150 ° 100 400 [A/µ Transient thermal impedance Z =f(t ) thJC ...
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Typ. C stored energy E =f 1.8 1.5 1.3 1.0 0.8 0.5 0.3 0.0 0 100 200 V Rev. 2.0 300 400 500 600 [V] R page 5 IDT02S60C 2007-04-25 ...
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Package Outline:PG-TO220-2-2 Rev. 2.0 page 6 IDT02S60C 2007-04-25 ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...