BAS45A,143 NXP Semiconductors, BAS45A,143 Datasheet - Page 3

• Manufacturer Part Number: BAS45A,143
• Description: DIODE LO-LEAK 125V 250MA DO-34
• Manufacturer: NXP Semiconductors

Specifications of BAS45A,143

• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 125V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 1nA @ 125V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934031240143

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13
V
I
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
Low-leakage diode
d
th j-tp
th j-a
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
I
R
R
I
I
I
V
V
V
V
= 10 mA; R
= 1 mA; see Fig.7
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 100 mA
= 125 V; E
= 30 V; T
= 125 V; T
= 125 V; T
8 mm from the body
lead length 10 mm; note 1
R
3
CONDITIONS
L
= 0; see Fig.6
j
= 100 Ω; measured at
= 125 °C; E
j
j
max
= 125 °C; E
= 150 °C; E
CONDITIONS
= 100 lx
F
= 10 mA to
max
max
max
= 100 lx
= 100 lx
= 100 lx
TYP.
1.5
VALUE
−
−
−
−
−
−
−
−
300
500
Product data sheet
MAX.
1 000
780
860
300
500
BAS45A
1
2
4
−
UNIT
K/W
K/W
mV
mV
mV
nA
nA
nA
μA
pF
μs
UNIT